I think we all need to drink in the implications of this. It means we can dynamically create transistor switches on the fly, like a Field Programmable Gate Array (FPGA). We can do this with existing lithography resolutions, although methods will have to be developed to produce high-quality bilayer graphene in bulk.Now professor Feng Wang at UC Berkeley claims to have demonstrated a technology that can electrically tune graphene's bandgap, enabling it to be used for digital transistors long before lithography hits sub-10 nanometer sizes.
"We have for the first time demonstrated that you can use an electric field to open or close a bandgap in graphene," Wang said. "There is no other material available today that can do this, only bilayer graphene."
Scientists have captured for the first time the image of memory formation.
EPI SiC ** First direct observation of a nearly ideal graphene band structure
Authors: M. Sprinkle, D. Siegel, Y. Hu, J. Hicks, P. Soukiassian, A. Tejeda, A. Taleb-Ibrahimi, P. Le Fèvre, F. Bertran, C. Berger, W.A. de Heer, A. Lanzara, E.H. Conrad
Angle-resolved photoemission and X-ray diffraction experiments show that multilayer epitaxial graphene grown on the SiC(000-1) surface is a new form of carbon that is composed of effectively isolated graphene sheets. The unique rotational stacking of these films cause adjacent graphene layers to electronically decouple leading to a set of nearly independent linearly dispersing bands (Dirac cones) at the graphene K-point. Each cone corresponds to an individual macro-scale graphene sheet in a multilayer stack where AB-stacked sheets can be considered as low density faults.
It's interesting to note that India is one of the leading producer/exporters of graphite to the world:Sanjay M wrote:Tuesday, May 27, 2008
Graphene-Polymer Composite
New composites could lead to better food packaging, and to lighter car and airplane parts.
By Prachi Patel-Predd
Looks like RSA is good as crackedSanjay M wrote:Simple Quantum Computing Chip Made
Researchers at Purdue's Birck Nanotechnology Center are collaborating with Indian colleagues at the Jawaharlal Nehru Center for Advanced Scientific Research and General Electric Co.'s John F. Welch India Technology Center to launch a center focused on how advancements in nanomaterials can address growing energy needs.
The Joint Networked Center on Nanomaterials for Energy, funded by the Indo-U.S. Science and Technology Forum, is supporting the exchange of four graduate student researchers, two postdoctoral researchers and two faculty members annually between Purdue and Jawaharlal Nehru Center's International Center for Materials Science in Bangalore, India. The international program also is placing two Purdue graduate student interns at GE's Technology Center each year.
"Students will have the opportunity to spend several months at partner institutions, formulating and working on joint research projects to solidify and expand ongoing collaborations between the Jawaharlal Nehru Center for Advanced Scientific Research and Purdue for advancing research in how nanomaterials can address growing energy needs," said Pankaj Sharma, associate director of operations and international affairs for Purdue's Discovery Park.
Arbinda Mitra, executive director of the Indo-U.S. Science & Technology Forum, said: "There also are internship opportunities for Purdue students to work for up to 20 weeks at GE's Technology Center."
and won the race beating Motoczys and Brammo on the way, handsomely......Sanjay M wrote:Team Agni prepares their electric motorcycle entry for the Tourist Trophy eXtreme Grand Prix (TTXGP) race on the Isle of Mann:
http://www.technologyreview.com/energy/23172/